四羟基和硅检测标准，四羟基和硅检测标准标准内容,检测中心-北检（北京）检测技术研究院

GB/T 14141-2009

硅外延层、扩散层和离子注入层薄层电阻的测定直排四探针法
Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array

【发布单位或类别】 CN-GB国家标准
【发布日期】2009-10-30
【CCS分类】H80半金属与半导体材料综合
【ICS分类】29.045半导体材料

GB/T 14141-2009

纺织染整助剂产品中八甲基环四硅氧烷（D4）、十甲基环五硅氧烷（D5）和十二甲基环六硅氧烷（D6）的测定
Determination of octamethylcyclotetrasiloxane(D4)， decamethylcyclopentasiloxane(D5) and dodecamethylcyclohexasiloxane(D6) in textile dyeing and finishing auxiliaries

【发布单位或类别】 CN-GB国家标准
【发布日期】2021-08-20
【CCS分类】G70化学助剂基础标准与通用方法
【ICS分类】71.100.40表面活性剂及其他助剂

GB/T 14141-2009

化妆品中八甲基环四硅氧烷（D4）和十甲基环五硅氧烷（D5）的测定气相色谱法
Determination of octamethylcyclotetrasiloxane(D4) and decamethylcyclopentasiloxane(D5) in cosmetics—Gas chromatography

【发布单位或类别】 CN-GB国家标准
【发布日期】2021-11-26
【CCS分类】Y42化妆品
【ICS分类】71.100.70美容品、化妆品

GB/T 14141-2009

抗氧剂四[β-(3,5-二叔丁基-4-羟基苯基)丙酸]季戊四醇酯和亚磷酸三(2,4-二叔丁基苯基)酯复配物（1010/168）

【发布单位或类别】 CN-HG行业标准-化工
【发布日期】2018-10-22
【CCS分类】G71化学助剂
【ICS分类】71.100.40表面活性剂及其他助剂

GB/T 14141-2009

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【发布单位或类别】 CN-HG行业标准-化工
【发布日期】2018-10-22
【CCS分类】G71化学助剂
【ICS分类】颜料和填充剂

GB/T 14141-2009

크로뮴산 아연 안료 — 염기성 크로뮴산 아연 칼륨과 사수산화 크로뮴산 아연 연료
Zinc chromate pigments — Basic zinc potassium chromate pigments and zinc tetrahydroxychromate pigments

【发布单位或类别】 KR-KS韩国标准
【发布日期】2013-12-30
【CCS分类】金属物理性能试验方法
【ICS分类】87.060.10颜料和填充剂

GB/T 14141-2009

크로뮴산 아연 안료 — 염기성 크로뮴산 아연 칼륨과 사수산화 크로뮴산 아연 연료
Zinc chromate pigments — Basic zinc potassium chromate pigments and zinc tetrahydroxychromate pigments

【发布单位或类别】 KR-KS韩国标准
【发布日期】2013-12-30
【CCS分类】合成树脂、塑料
【ICS分类】87.060.10电学、磁学综合

GB/T 14141-2009

실리콘 단결정 및 실리콘 웨이퍼의 4탐침법에 의한 저항률 측정 방법
Testing method of resistivity for silicon crystals and silicon wafers with four - point probe

【发布单位或类别】 KR-KS韩国标准
【发布日期】2002-05-29
【CCS分类】化学助剂、表面活性剂、催化剂、水处理剂
【ICS分类】17.220.01电学、磁学综合

GB/T 14141-2009

실리콘 단결정 및 실리콘 웨이퍼의 4탐침법에 의한 저항률 측정 방법
Testing method of resistivity for silicon crystals and silicon wafers with four - point probe

【发布单位或类别】 KR-KS韩国标准
【发布日期】2002-05-29
【CCS分类】农药管理与使用方法
【ICS分类】17.220.01半导体材料

GB/T 14141-2009

硅外延层、扩散层和离子注入层薄层电阻的测定　直排四探针法
Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array

【发布单位或类别】 CN-GB国家标准
【发布日期】1993-02-06
【CCS分类】H21
【ICS分类】29.045塑料

GB/T 14141-2009

塑料四羟基聚醚多元醇
Plastics - Tetrahydroxy polyether polyols

【发布单位或类别】 CN-GB国家标准
【发布日期】2010-09-26
【CCS分类】G32
【ICS分类】83.080表面活性剂及其他助剂

GB/T 14141-2009

MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON
MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON

【发布单位或类别】 US-MIL美国军事规范和标准
【发布日期】1997-07-29
【CCS分类】
【ICS分类】杀虫剂和其他农用化工产品

GB/T 14141-2009

MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON
MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON

【发布单位或类别】 US-MIL美国军事规范和标准
【发布日期】1997-04-04
【CCS分类】
【ICS分类】

GB/T 14141-2009

MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON
MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON

【发布单位或类别】 US-MIL美国军事规范和标准
【发布日期】1995-12-15
【CCS分类】
【ICS分类】

GB/T 14141-2009

MICROCIRCUIT, LINEAR, QUAD SUPPLY AND LINE MONITOR, MONOLITHIC SILICON (SUPERSEDING DESC 5962-88697B)
MICROCIRCUIT, LINEAR, QUAD SUPPLY AND LINE MONITOR, MONOLITHIC SILICON (SUPERSEDING DESC 5962-88697B)

【发布单位或类别】 US-MIL美国军事规范和标准
【发布日期】2001-05-22
【CCS分类】
【ICS分类】

GB/T 14141-2009

Surface active agents - Determination of hydroxyl value - p-Toluensulfonyl isocyanate (TSI) method and potentiometric titration with tetrabutylammonium hydroxide

【发布单位或类别】 IX-CEN欧洲标准化委员会
【发布日期】2006-11-29
【CCS分类】G70/79
【ICS分类】71.100.40

GB/T 14141-2009

Commission Regulation (EU) No 500/2013 of 30 May 2013 amending Annexes II, III and IV to Regulation (EC) No 396/2005 of the European Parliament and of the Council as regards maximum residue levels for acetamiprid, Adoxophyes orana granulovirus strain BV-0001, azoxystrobin, clothianidin, fenpyrazamine, heptamaloxyloglucan, metrafenone, Paecilomyces lilacinus strain 251, propiconazole, quizalofop-P, spiromesifen, tebuconazole, thiamethoxam and zucc
Commission Regulation (EU) No 500/2013 of 30 May 2013 amending Annexes II, III and IV to Regulation (EC) No 396/2005 of the European Parliament and of the Council as regards maximum residue levels for acetamiprid, Adoxophyes orana granulovirus strain BV-0001, azoxystrobin, clothianidin, fenpyrazamine, heptamaloxyloglucan, metrafenone, Paecilomyces lilacinus strain 251, propiconazole, quizalofop-P, spiromesifen, tebuconazole, thiamethoxam and zucc

【发布单位或类别】 IX-EURLEX欧洲技术法规
【发布日期】2013-05-30
【CCS分类】B17
【ICS分类】65.100

GB/T 14141-2009

Surface active agents - Determination of hydroxyl value. p-Toluensulfonyl isocyanate (TSI) method and potentiometric titration with tetrabutylammonium hydroxide
Surface active agents - Determination of hydroxyl value. p-Toluensulfonyl isocyanate (TSI) method and potentiometric titration with tetrabutylammonium hydroxide

【发布单位或类别】 ES-UNE西班牙标准
【发布日期】2007-04-18
【CCS分类】
【ICS分类】

GB/T 14141-2009

MICROCIRCUIT, DIGITAL-LINEAR, QUAD, 8-BIT ANALOG DATA ACQUISTION AND MONITORING SYSTEMS, MONOLITHIC SILICON
MICROCIRCUIT, DIGITAL-LINEAR, QUAD, 8-BIT ANALOG DATA ACQUISTION AND MONITORING SYSTEMS, MONOLITHIC SILICON

【发布单位或类别】 US-MIL美国军事规范和标准
【发布日期】1995-12-04
【CCS分类】
【ICS分类】

GB/T 14141-2009

Surface active agents. Determination of hydroxyl value. p-Toluensulfonyl isocyanate (TSI) method and potentiometric titration with tetrabutylammonium hydroxide
Surface active agents. Determination of hydroxyl value. p-Toluensulfonyl isocyanate (TSI) method and potentiometric titration with tetrabutylammonium hydroxide

【发布单位或类别】 GB-BSI英国标准学会
【发布日期】2006-12-29
【CCS分类】
【ICS分类】

四羟基和硅检测标准

硅外延层、扩散层和离子注入层薄层电阻的测定 直排四探针法 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array

化妆品中八甲基环四硅氧烷（D4）和十甲基环五硅氧烷（D5）的测定 气相色谱法 Determination of octamethylcyclotetrasiloxane(D4) and decamethylcyclopentasiloxane(D5) in cosmetics—Gas chromatography

抗氧剂 四[β-(3,5-二叔丁基-4-羟基苯基)丙酸]季戊四醇酯和亚磷酸三(2,4-二叔丁基苯基)酯复配物（1010/168）

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크로뮴산 아연 안료 — 염기성 크로뮴산 아연 칼륨과 사수산화 크로뮴산 아연 연료 Zinc chromate pigments — Basic zinc potassium chromate pigments and zinc tetrahydroxychromate pigments

크로뮴산 아연 안료 — 염기성 크로뮴산 아연 칼륨과 사수산화 크로뮴산 아연 연료 Zinc chromate pigments — Basic zinc potassium chromate pigments and zinc tetrahydroxychromate pigments

실리콘 단결정 및 실리콘 웨이퍼의 4탐침법에 의한 저항률 측정 방법 Testing method of resistivity for silicon crystals and silicon wafers with four - point probe

실리콘 단결정 및 실리콘 웨이퍼의 4탐침법에 의한 저항률 측정 방법 Testing method of resistivity for silicon crystals and silicon wafers with four - point probe

硅外延层、扩散层和离子注入层薄层电阻的测定 直排四探针法 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array

塑料 四羟基聚醚多元醇 Plastics - Tetrahydroxy polyether polyols

MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON

MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON

MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON

MICROCIRCUIT, LINEAR, QUAD SUPPLY AND LINE MONITOR, MONOLITHIC SILICON (SUPERSEDING DESC 5962-88697B) MICROCIRCUIT, LINEAR, QUAD SUPPLY AND LINE MONITOR, MONOLITHIC SILICON (SUPERSEDING DESC 5962-88697B)

Surface active agents - Determination of hydroxyl value - p-Toluensulfonyl isocyanate (TSI) method and potentiometric titration with tetrabutylammonium hydroxide

MICROCIRCUIT, DIGITAL-LINEAR, QUAD, 8-BIT ANALOG DATA ACQUISTION AND MONITORING SYSTEMS, MONOLITHIC SILICON MICROCIRCUIT, DIGITAL-LINEAR, QUAD, 8-BIT ANALOG DATA ACQUISTION AND MONITORING SYSTEMS, MONOLITHIC SILICON

北检院部分仪器展示

硅外延层、扩散层和离子注入层薄层电阻的测定直排四探针法
Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array

化妆品中八甲基环四硅氧烷（D4）和十甲基环五硅氧烷（D5）的测定气相色谱法
Determination of octamethylcyclotetrasiloxane(D4) and decamethylcyclopentasiloxane(D5) in cosmetics—Gas chromatography

抗氧剂四[β-(3,5-二叔丁基-4-羟基苯基)丙酸]季戊四醇酯和亚磷酸三(2,4-二叔丁基苯基)酯复配物（1010/168）

크로뮴산 아연 안료 — 염기성 크로뮴산 아연 칼륨과 사수산화 크로뮴산 아연 연료
Zinc chromate pigments — Basic zinc potassium chromate pigments and zinc tetrahydroxychromate pigments

크로뮴산 아연 안료 — 염기성 크로뮴산 아연 칼륨과 사수산화 크로뮴산 아연 연료
Zinc chromate pigments — Basic zinc potassium chromate pigments and zinc tetrahydroxychromate pigments

실리콘 단결정 및 실리콘 웨이퍼의 4탐침법에 의한 저항률 측정 방법
Testing method of resistivity for silicon crystals and silicon wafers with four - point probe

실리콘 단결정 및 실리콘 웨이퍼의 4탐침법에 의한 저항률 측정 방법
Testing method of resistivity for silicon crystals and silicon wafers with four - point probe

硅外延层、扩散层和离子注入层薄层电阻的测定　直排四探针法
Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array

塑料四羟基聚醚多元醇
Plastics - Tetrahydroxy polyether polyols

MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON
MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON

MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON
MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON

MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON
MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD AND/OR SELECT GATE, MONOLITHIC SILICON

MICROCIRCUIT, LINEAR, QUAD SUPPLY AND LINE MONITOR, MONOLITHIC SILICON (SUPERSEDING DESC 5962-88697B)
MICROCIRCUIT, LINEAR, QUAD SUPPLY AND LINE MONITOR, MONOLITHIC SILICON (SUPERSEDING DESC 5962-88697B)

MICROCIRCUIT, DIGITAL-LINEAR, QUAD, 8-BIT ANALOG DATA ACQUISTION AND MONITORING SYSTEMS, MONOLITHIC SILICON
MICROCIRCUIT, DIGITAL-LINEAR, QUAD, 8-BIT ANALOG DATA ACQUISTION AND MONITORING SYSTEMS, MONOLITHIC SILICON