1羟基1胺不稳定检测标准

Semiconductor devices – Bias-temperature instability test for metal-oxide semiconductor field-effect transistors (MOSFETs) –Part 1: Fast bias temperature instability test for MOSFETs

Resistor, Fixed, Film, Nonestablished Reliability, Established Reliability, and Space Level, Style RN*70 1/

Resistors, Fixed, Film, Nonestablished Reliability, Established Reliability, and Space Level, Style RN*75 1/

Semiconductor devices—Reliability test method for silicon carbide metal-oxide semiconductor field effect transistors (SiC MOSFET)—Part 1: Test method for bias temperature instability

RESISTORS, CHIP, FIXED, FILM, NONESTABLISHED RELIABILITY, ESTABLISHED RELIABILITY, SPACE LEVEL, STYLE RM0502 (SUPERSEDING MIL-PRF-55342/1H)

H-acid monosodium salt（1-Naphthylamine-8-hydroxy-3,6-disulfonic acid monosodium salt)

RESISTORS, FIXED, FILM, CHIP, NONESTABLISHED RELIABILITY, ESTABLISHED RELIABILITY, SPACE LEVEL STYLE RM0502 (SUPERSEDING MIL-R-55342/1G) (S/S BY MIL-PRF-55342/1J)

TRANSMITTER, REMOTE COMPASS, THIN WING, ML-1 (UNSTABILIZED) (SUPERSEDING QPL-19576-2) (NO S/S DOCUMENT)

1-Naphthyamine

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

RESISTORS, FIXED, WIRE-WOUND (ACCURATE), NONESTABLISHED RELIABILITY, AND ESTABLISHED RELIABILITY STYLE RBR52 (SUPERSEDING MIL-R-39005/1D AND MIL-R-93/10G)

RESISTORS, VARIABLE, NONWIRE-WOUND (ADJUSTMENT TYPE, LEAD-SCREW ACTUATED), NONESTABLISHED RELIABILITY, AND ESTABLISHED RELIABILITY STYLE RJR12 (SUPERSEDING MIL-R-39035/1C)

Implants for surgery—Hydroxyapatite—Part 1:Ceramic hydroxyapatite

1-Amino-8-hydroxy-3,6-naphthalenedisulfonic acid monosodium salt(H-acid monosodium salt)

1,6-Hexanediamine for industrial use

2-Naphthylamine-1，5-disulfonic acid （sulphonic Tobias acid ）

Feed additive—Thiamine mononitrate（Vitamin B1）