MIL MIL-PRF-19500/717 Notice 3-Validation 3
SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036AUEG THROUGH 1N6072AUEG, 1N6036AUEJ THROUGH 1N6072AUEJ, JAN, JANTX, AND JANTXV
MIL MIL-PRF-19500/717
SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036AUEG THROUGH 1N6072AUEG, 1N6036AUEJ THROUGH 1N6072AUEJ, JAN, JANTX, AND JANTXV
MIL MIL-PRF-19500/716 Notice 3-Validation 3
SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555UEG THROUGH 1N5558UEG, 1N5555UEJ THROUGH 1N5558UEJ, 1N5629AUEG THROUGH 1N5665AUEG, 1N5629AUEJ THROUGH 1N5665AUEJ, 1N5907UEG, 1N5907
MIL MIL-PRF-19500/716 Notice 2-Validation 2
Semiconductor Device, Diode, Non-Hermetic, Epoxy, Surface Mount, Silicon, Unipolar Transient Voltage Suppressor Types 1N5555UEG through 1N5558UEG, 1N5555UEJ through 1N5558UEJ, 1N5629AUEG through 1N5665AUEG, 1N5629AUEJ through 1N5665AUEJ, 1N5907UEG, 1N5907UEJ JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/716
SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555UEG THROUGH 1N5558UEG, 1N5555UEJ THROUGH 1N5558UEJ, 1N5629AUEG THROUGH 1N5665AUEG, 1N5629AUEJ THROUGH 1N5665AUEJ, 1N5907UEG, 1N5907
T/CNIA 0143-2022
T/ZGM 007-2024
T/ZGM 006-2024
T/ZGM 005-2024
UNE-EN 60371-3-7:1996
SPECIFICATION FOR INSULATING MATERIALS BASED ON MICA. PART 3: SPECIFICATIONS FOR INDIVIDUAL MATERIALS. SHEET 7: POLYESTER FILM MICA PAPER WITH AN EPOXY RESIN BINDER FOR SINGLE CONDUCTOR TAPING.
IEC 60371-3-7:1995/AMD1:2006
Amendment 1 - Insulating materials based on mica - Part 3: Specifications for individual materials - Sheet 7: Polyester film mica paper with an epoxy resin binder for single conductor taping
MIL MIL-PRF-19500/623A Notice 1-Validation
SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICONE, HIGH-POWER TYPE 2N7371 JANTX JANTXV, AND JANS (SUPERSEDING MIL-S-19500/623) (S/S BY MIL-PRF-19500/623B)
MIL MIL-PRF-19500/623A
SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICONE, HIGH-POWER TYPE 2N7371 JANTX JANTXV, AND JANS (SUPERSEDING MIL-S-19500/623) (S/S BY MIL-PRF-19500/623B)
MIL MIL-PRF-19500/228H
SEMICONDUCTOR DEVICE, DIODE, SILICONE, RECTIFIER, TYPES 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, JAN AND JANTX (SUPERSEDING MIL-S-19500/228G) (S/S BY MIL-PRF-19500/228J)
MIL MIL-PRF-19500/228J
SEMICONDUCTOR DEVICE, DIODE, SILICONE, RECTIFIERE, TYPES 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, 1N3611EG1, 1N3612EG1, 1N3613EG1, 1N3614EG1, 1N3957EG1, JAN AND JANTX (SUPERSEDING MIL-PRF-19500/225H)(S/S BY MIL-PRF-19500/228K)