螯合树脂 硅检测标准
CNAS认证
CMA认证
GB/T 35157-2017(\u82f1\u6587\u7248)
树脂型合成石板材
树脂型合成石板材
- 【发布单位或类别】 CN-GB国家标准
- 【发布日期】2017-12-29
- 【CCS分类】Q21石材制品
- 【ICS分类】反应容器及其组件
HG/T 4170-2011
钢制螯合树脂塔
- 【发布单位或类别】 CN-HG行业标准-化工
- 【发布日期】2011-12-20
- 【CCS分类】G93化工设备
- 【ICS分类】71.120.10非金属矿
DZ/T 0064.20-2021
地下水质分析方法 第20部分：铜、铅、锌、镉、镍和钴量的测定 螯合树脂交换富集火焰原子吸收分光光度法
Methods for analysis of groundwater quality—Part 20：Determination of copper,lead,zinc,cadmium,nickel and cobalt contents—Flame atomic absorption spectrophotometry with chelating resin exchange enrichment
- 【发布单位或类别】 CN-DZ行业标准-地质
- 【发布日期】2021-02-22
- 【CCS分类】D59其他非金属矿
- 【ICS分类】73.080塑料综合
T/ZGM 018-2022
质量分级及“领跑者”评价要求 二次盐水精制用螯合树脂
- 【发布单位或类别】 CN-TUANTI团体标准
- 【发布日期】2022-11-18
- 【CCS分类】G31合成树脂、塑料基础标准与通用方法
- 【ICS分类】83.080.01水质
DZ/T 0064.20-1993
地下水质检验方法 螯合树脂交换富集火焰原子吸收光谱法 测定铜、铅、锌、镉、镍和钴
- 【发布单位或类别】 CN-DZ行业标准-地质
- 【发布日期】1993-02-27
- 【CCS分类】D14水文地质勘察
- 【ICS分类】13.060涂层织物
MIL MIL-T-82840 Notice 1-Cancellation
TAPE, SILICA CLOTH, PHENOLIC-PREIMPREGNATED (NO S/S DOCUMENT)
TAPE, SILICA CLOTH, PHENOLIC-PREIMPREGNATED (NO S/S DOCUMENT)
- 【发布单位或类别】 US-MIL美国军事规范和标准
- 【发布日期】1993-02-25
- 【CCS分类】
- 【ICS分类】
MIL MIL-T-82840
TAPE, SILICA CLOTH, PHENOLIC-PREIMPREGNATED (NO S/S DOCUMENT)
TAPE, SILICA CLOTH, PHENOLIC-PREIMPREGNATED (NO S/S DOCUMENT)
- 【发布单位或类别】 US-MIL美国军事规范和标准
- 【发布日期】1989-12-29
- 【CCS分类】
- 【ICS分类】
KS C IEC 60394-3-2-2018
전기용 바니시 처리된 직물류 — 제3부: 개별 재료에 대한 규격 — 제2절: 에폭시, 폴리우레탄, 실리콘, 폴리에스테르, 역청질 또는 올레오레진 바니시 처리한 유리 직물류
Varnished fabrics for electrical purposes — Part 3: Specifications for individual materials — Sheets 2: Glass-fabric based varnished fabrics with epoxy, polyurethane, silicone, polyester, bituminous or oleoresinous varnish
- 【发布单位或类别】 KR-KS韩国标准
- 【发布日期】2018-04-18
- 【CCS分类】
- 【ICS分类】29.035.60
MIL MIL-PRF-19500/717 Notice 3-Validation 3
SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036AUEG THROUGH 1N6072AUEG, 1N6036AUEJ THROUGH 1N6072AUEJ, JAN, JANTX, AND JANTXV
SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036AUEG THROUGH 1N6072AUEG, 1N6036AUEJ THROUGH 1N6072AUEJ, JAN, JANTX, AND JANTXV
- 【发布单位或类别】 US-MIL美国军事规范和标准
- 【发布日期】2020-02-26
- 【CCS分类】
- 【ICS分类】
MIL MIL-PRF-19500/717
SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036AUEG THROUGH 1N6072AUEG, 1N6036AUEJ THROUGH 1N6072AUEJ, JAN, JANTX, AND JANTXV
SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036AUEG THROUGH 1N6072AUEG, 1N6036AUEJ THROUGH 1N6072AUEJ, JAN, JANTX, AND JANTXV
- 【发布单位或类别】 US-MIL美国军事规范和标准
- 【发布日期】2005-05-09
- 【CCS分类】
- 【ICS分类】
MIL MIL-PRF-19500/716 Notice 3-Validation 3
SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555UEG THROUGH 1N5558UEG, 1N5555UEJ THROUGH 1N5558UEJ, 1N5629AUEG THROUGH 1N5665AUEG, 1N5629AUEJ THROUGH 1N5665AUEJ, 1N5907UEG, 1N5907
SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555UEG THROUGH 1N5558UEG, 1N5555UEJ THROUGH 1N5558UEJ, 1N5629AUEG THROUGH 1N5665AUEG, 1N5629AUEJ THROUGH 1N5665AUEJ, 1N5907UEG, 1N5907
- 【发布单位或类别】 US-MIL美国军事规范和标准
- 【发布日期】2020-02-26
- 【CCS分类】
- 【ICS分类】
MIL MIL-PRF-19500/716 Notice 2-Validation 2
Semiconductor Device, Diode, Non-Hermetic, Epoxy, Surface Mount, Silicon, Unipolar Transient Voltage Suppressor Types 1N5555UEG through 1N5558UEG, 1N5555UEJ through 1N5558UEJ, 1N5629AUEG through 1N5665AUEG, 1N5629AUEJ through 1N5665AUEJ, 1N5907UEG, 1N5907UEJ JAN, JANTX, and JANTXV
Semiconductor Device, Diode, Non-Hermetic, Epoxy, Surface Mount, Silicon, Unipolar Transient Voltage Suppressor Types 1N5555UEG through 1N5558UEG, 1N5555UEJ through 1N5558UEJ, 1N5629AUEG through 1N5665AUEG, 1N5629AUEJ through 1N5665AUEJ, 1N5907UEG, 1N5907UEJ JAN, JANTX, and JANTXV
- 【发布单位或类别】 US-MIL美国军事规范和标准
- 【发布日期】2015-03-18
- 【CCS分类】
- 【ICS分类】
MIL MIL-PRF-19500/716
SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555UEG THROUGH 1N5558UEG, 1N5555UEJ THROUGH 1N5558UEJ, 1N5629AUEG THROUGH 1N5665AUEG, 1N5629AUEJ THROUGH 1N5665AUEJ, 1N5907UEG, 1N5907
SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555UEG THROUGH 1N5558UEG, 1N5555UEJ THROUGH 1N5558UEJ, 1N5629AUEG THROUGH 1N5665AUEG, 1N5629AUEJ THROUGH 1N5665AUEJ, 1N5907UEG, 1N5907
- 【发布单位或类别】 US-MIL美国军事规范和标准
- 【发布日期】2005-04-28
- 【CCS分类】
- 【ICS分类】
